Now showing items 1-3 of 3
Fabrication and characterization of aluminum gallium arsenide/gallium arsenide 2DEG hot-electron microbolometers
In this thesis, a hot-electron bolometric device (detector and mixer), which uses the nonlinearities of the heated two-dimensional electron gas (2DEG) medium in a AlGaAs/GaAs heterostructure, is analyzed and studied. The ...
Quantificaion of ion diffusion in gallium arsenide-based spintronic Light-Emitting Diode devices using time-of-flight secondary ion mass spectrometry
Depth profiling using Secondary Ion Mass Spectrometry (SIMS) is a direct method to measure diffusion of atomic or molecular species that have migrated distances of nanometers/micrometers in a specific material. For this ...
Setup of a reactive ion-etching system
Reactive-ion etching (RIE) is an essentially physical etching technique, which adds the properties of a classical pure chemical etching and a pure physical etching. The goals of this thesis were to set up the procedure of ...