Show simple item record

dc.contributorCassandra M. Queen Program Manageren_US
dc.contributor.authorChu Wie Principal Investigatoren_US
dc.datestart 06/01/1987en_US
dc.dateexpiration 11/30/1989en_US
dc.date.accessioned2014-04-02T18:20:08Z
dc.date.available2014-04-02T18:20:08Z
dc.date.issued2014-04-02
dc.identifier8707111en_US
dc.identifier.urihttp://hdl.handle.net/10477/22909
dc.descriptionGrant Amount: $ 68973en_US
dc.description.abstractLattice-mismatched GaInAs and A InAs layers will be grown on InP and GaAs substrates by MBE and MOCVD. Different-density misfit dislocations will be intentionally introduced. Samples will be nondestructively characterized by the x-ray rocking curve technique and the rocking curve topography technique, and cleaned and cleaved. Thin metal film Ohmic or Schottky contacts will be formed and I-V or C-V characteristics will be studied. Expected results are (l) Schottky barrier heights for the ternary epilayer-substrate junction as a function of the misfit dislocation density, (2) effects of the misfit dislocations in the electrical characteristics for p-i-n and n-n+-n heterostructures, (3) the critical thickness of the ternary epilayer as a function of the misfit, and (4) assessment of the nondestructive x-ray technique in measurements of the misfit dislocations. This proposed project is expected to improve the present understanding of the effects of the misfit dislocations in device performance and provide further and accurate data on the Schottky barrier heights for metal-ternary and ternary-substrate contacts.en_US
dc.titleEIA: Studies of III-V Lattice-Mismatched Heterojunction Devicesen_US
dc.typeNSF Granten_US


Files in this item

Thumbnail
Thumbnail

This item appears in the following Collection(s)

Show simple item record