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dc.contributor.authorBae, Jong Uk
dc.date.accessioned2016-03-21T20:13:34Z
dc.date.available2016-03-21T20:13:34Z
dc.date.issued2007
dc.identifier.other304765660
dc.identifier.urihttp://hdl.handle.net/10477/42648
dc.description.abstractThe subject of this dissertation is the exploration of a new class of hybrid semiconductor nanomagnetoelectronic devices. In these studies, single-domain nanomagnets are used as the gate in a transistor structure, and the spatially non-uniform magnetic fields that they generate provide an additional means to modulate the channel conductance. A quantum wire etched in a high-mobility GaAs/AlGaAs quantum well serves as the channel of this device and the current flow through it is modulated by a high-aspect-ratio Co nanomagnet. The conductance of this device exhibits clear hysteresis in a magnetic field, which is significantly enhanced when the nanomagnet is used as a gate to form a local tunnel barrier in the semiconductor channel. A simple theoretical model, which models the tunnel barrier as a simple harmonic saddle, is able to account for the experimentallyobserved behavior. Further improvements in the tunneling magneto-resistance of this device should be possible in the future by optimizing the gate and channel geometries. In addition to these investigations, we have also explored the hysteretic magnetoresistance of devices in which the tunnel barrier is absent and the behavior is instead dominated by the properties of the magnetic barrier alone. We show experimentally how quantum corrections to the conductance of the quantum wire compete against the magneto-transport effects induced by the non-uniform magnetic field.
dc.languageEnglish
dc.subjectApplied sciences
dc.subjectPure sciences
dc.subjectNanomagnetoelectronic
dc.subjectNanomagnets
dc.subjectMagnetoresistance
dc.titleHybrid semiconductor nanomagnetoelectronic devices
dc.typeDissertation/Thesis


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