Setup of a reactive ion-etching system
MetadataShow full item record
Reactive-ion etching (RIE) is an essentially physical etching technique, which adds the properties of a classical pure chemical etching and a pure physical etching. The goals of this thesis were to set up the procedure of reactive-ion etching of gallium arsenide (GaAs) wafers at the new UB's electrical department RIE system purchased from Torr Inc, NY. The preliminary results of GaAs wafers were obtained. These etched wafers were studied using atomic force microscopy and conclusions were made, as well as recommendations for RIE etching procedure.