Effects of high-energy electron irradiation on zinc oxide/silicon metal-semiconductor-metal photodetectors
Catalfamo, Franklin C.
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Metal-semiconductor-metal photodetectors (MSM-PDs) based on ZnO/Si heterostructures as well as Si alone were subjected to high-energy electron irradiation (HEEI) to a total fluence of 2x10 13 cm -2 . Electrons with energies of 6 MeV and 12 MeV were applied to separate sample sets that included devices of each type in order to investigate the relative radiation resistance of ZnO/Si MSM-PDs to similar Si devices. The effects of HEEI on the conduction mechanisms of ZnO/Si MSM-PDs were also investigated. Other ZnO/Si MSM-PDs were exposed to a 12 MeV e - fluence of 1x10 13 cm -2 and used for radiation-induced defect analysis and observation for any room temperature annealing phenomenon. ZnO/Si MSM-PDs demonstrated at least 43% greater radiation resistance than similar Si devices. Room temperature annealing of radiation damage was observed as a 63% recovery of photocurrent over 47 days. The current transport mechanism for ZnO/Si MSM-PDs was dominated by space charge limited conduction (SCLC) with minimal effect on conduction regime due to HEEI. Analysis of photoluminescence (PL) data indicate that the radiation induced defects are likely oxygen and zinc vacancies, ( V o + ) and ( V - Zn - H + ) o , respectively.