Steady-state analysis of semiconductor spin-lasers
Gothgen, Christian D.
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We study the effects of spin-polarized injection on semiconductor lasers with quantum confined gain media. Specifically we study quantum well (QW) and quantum dot (QD) spin-lasers. We show that the maximum threshold reduction which can be achieved is 55% and not the generally accepted 50% for both QW and QD based spin-lasers. In addition, we show that this threshold reduction is enhanced by ultrafast spin-relaxation of holes. It is also demonstrated that spin-lasers have two thresholds, the first or majority threshold is the onset of lasing for the the most abundant spin-species and a second or minority threshold for the onset of lasing for least abundant or minority spin-species. Furthermore, we also show the existence of a spin-filering interval where the light is fully polarized even if the injection polarization is less than unity, which exists between the majority and minority thresholds. We analyze how different modes of carrier recombination affect the threshold reduction and the size of the spin-filtering regime.