Toward Nanoscale Material Applications: Colloidal Quantum Dot Memory And Multi-Layer Graphene Electronics And Optoelectronics
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In this dissertation, the analysis of a possible use of colloidal semiconductor quantum dots (QDs) in memory storage devices is presented. The charging and discharging behaviors of capped cadmium selenide (CdSe) QDs deposited on a sheet of graphite film layers in ambient conditions were analyzed. Individual QDs can be addressed (charged) with the synergistic action of light and the mechanical interaction of a probe of an atomic force microscope (AFM). The probe squeezes the coating layer of QDs helping the photoelectron to tunnel to either the conductive AFM probe or to the substrate. The charge can be induced on individual QDs by locating the QDs with AFM. The charges were stable in ambient conditions (survived up to 24 hours), and even recovered within a minute after their forced neutralization by airflow of negative ions. The analyzed QDs allow recording information at a density up to 1Tb/cm 2 . A possibility to attain charging (writing) time down to nanoseconds while keeping discharging (storage) times for more than 100 years is also demonstrated. These results may also be of interest for QDs based sensors, memory, and solar cell applications. Multi-layer heteroepitaxial graphene was successfully formed on 3C-SiC grown on a Si substrate using single gas source molecular beam epitaxy (MBE). The observation of ambipolar behavior, one of the unique properties of graphene, verifies the successful growth of graphene layers. The epitaxial graphene is believed to be unintentionally p-type doped with the Fermi level offset around +0.11∼+0.12 V at the Dirac point. Backgate field-effect transistors using multilayer graphene channel were designed, fabricated and characterized for electronic and optoelectronic applications. Even though some gate leakage current was observed, the experimental results show the device worked as an n-type transistor as well as an infrared detector. The drain saturated current of the graphene channel transistor is on the order of mA/mm. The extracted effective mobility was calculated to be around 6000 cm/ V.s which is much higher than Si under any circumstances. The photoreponsivity of the device was achieved up to 100 A/W at 1064 nm wavelength source. Constant photocurrent from 1400 nm to 1600 nm due to interband transition was also observed. The response at 1.6 THz with photoresponsivity of 75 μA/W at 1.6 THz is believed due to intraband transitions.