A Scalable, High Sensitivity CMOS Electric Field Sensor
Schaub, R. M.
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A scalable, high sensitivity Complimentary Metal-Oxide Semiconductor (CMOS) electrical field sensor is presented. The sensor features a relatively small form factor compared to competing technologies, a wide dynamic range, and a sensitivity of 27.74nA per kV/m. The sensor was designed for and fabricated on a 2064μm by 2442μm silicon wafer using ON Semiconductor's 0.5μm Mixed-Mode technology available through the MOSIS fabrication service. This sensor would be useful in a variety of applications in fields such as biomedical engineering, materials science, power transmission monitoring, electric motor monitoring, non-destructive testing, and more.