"Counterdoping" and Tuning of the Near Infrared Plasmonics in Non Stoichiometric Copper Sulfide for Solar Cell Application
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Copper Sulfide Cu 2 S has attracted much attention as a p-type material for solar cell application in the early eighties, although the inevitable degradation occurring through air exposition has plummeted the interest for such semiconductors. Throughout this thesis, we have reviewed and elucidated the major reasons for such degradation. The "counterdoping" of non stoichiometric copper sulfide Cu x S has been proposed to remedy this problem, using simple one pot low temperature syntheses under Nitrogen atmosphere. To assess the success of the technique, comparisons with stoichiometric and non stoichiometric Copper Indium Sulfide quantum dots grown under similar conditions has been proposed. Also the Localized Surface Plasmon Resonance (LSPR) of the semiconductor has been monitored as an indication of the carrier density in the quantum dots. Here, to single out the effects of the carrier concentration on the LSPR, STEM, NIR and UV-vis sprectroscopy, Photoluminescence (PL), EDS as well as XRD measurements has been conducted to support our thesis.